| PART |
Description |
Maker |
| GWM220-004P3-BL GWM220-004P3-SL |
180 A, 40 V, 0.0026 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS CORP
|
| AM1370N |
N-Channel 180-V (D-S) MOSFET
|
Analog Power
|
| TP0205A-T1-E3 |
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| IRFF130 |
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conductor P...
|
| 2N7224TX |
34 A, 180 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
HARRIS SEMICONDUCTOR
|
| MRF372 |
MRF372 470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET
|
Motorola
|
| IXTK180N15 |
High Current MegaMOSTMFET 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STP310N10F7 |
N-channel 100 V, 2.3 mΩ typ., 180 A STripFET VII DeepGATE Power MOSFET in a TO-220 package
|
STMicroelectronics
|
| STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| SPEAR-07-NC03 |
1 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PBGA180 LEAD FREE, 12 X 12 MM, 1.70 MM HEIGHT, LFBGA-180
|
ST Microelectronics
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
|
